Intel and Micron develop the first 128 GB NAND chip in 20 nm
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The development joint venture formed by Intel and Micron, IM Flash Technologies, has just announced a new milestone in the storage industry and in particular, in the development of NAND Flash technology.
This is the first multi-level cell (MLC) memory device manufactured with the 20 nanometer process and with a capacity of 128 GB.
The people in charge of Intel and Micron explain that this new NAND chip provides double the storage capacity and performance of the current 64 GB NAND chips also manufactured in 20 nanometers.
The new range of NAND meets ONFI 3.0 specifications by reaching speeds of 333 megatransfers per second (MT/s). This chip aims to offer a new storage solution for mobile devices, tablets and smartphones, which are increasingly opting for thinner and lighter designs.
“As portable devices get smaller and thinner, our customers demand innovative storage technologies,” says Glen Hawk, vice president of solutions at Micron, “our collaboration with Intel continues to deliver leading NAND technologies”.

The first units of the 128 GB NAND chip will be available in January next year, and mass production will begin throughout the first half. In addition, Intel and Micron have announced the start of mass production of their 64GB NAND chip, also manufactured with the 20 nanometer process. -
It seems to be the first step towards high-capacity SSDs and the price drop of current ones, they just need to solve the reliability problems of current SSDs.
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